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Product List
1951. 31A 600V N-Channel Super Junction Power Mosfet Djc099n60f to-247 
[Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30.7 A (T=100ºC) 19.4 A Drain ...
1952. 80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...
1953. 40A 650V Sic Schottky Barrier Diode Dcc40d65g4 to-247 [Jun 23, 2025]
8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1954. 19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08d to-252b [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 19 A (T=100ºC) 13 A Drain ...
1955. 16A 600V Fast Recovery Diode Murf1660CT to-220f [Jun 23, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1956. 40A 400V Fast Recovery Diode Mur40fu40CT to-220f [Jun 23, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1957. 5A 600V N-Channel Enhancement Mode Power Mosfet F5n60 to-220f [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT F5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
1958. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b [Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...
1959. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30ad to-252b [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
1960. 60A 200V Schottkybarrierdiode Mbr60200CT to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...
1961. 10A 500V N-Channel Enhancement Mode Power Mosfet F10n50 to-220f [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) (Tc=25ºC) 10 (Tc=100ºC) 6.3 A Drain ...
1962. 650V 4A Sic Schottky Barrier Diode Dcd04D65g4 to-252 Package [Jun 23, 2025]
25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1963. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1964. 2A 600V N-Channel Enhancement Mode Power Mosfet D2n60 to-252b [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT D2N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 0A (T=100ºC) 1.3 A Drain ...
1965. 15A 600V Fast Recovery Diode Mur1560A [Jun 23, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
