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Product List
706. Hot Selling 3-Phase Silicon Controlled Rectifier SCR Module for Thyristor Applications 
[Jan 04, 2026]
Product Description High-Power Capability: Experience the superior performance of the Hot selling MTG 50-300a three-phase thyristor voltage regulator rectifier, which offers an impressive peak output current of 800A. ...
707. Costomable Professional Electronic Component Square Bridge Rectifier Diode Essential Electrical ... [Jan 04, 2026]
Product Description High Power Handling Capacity: Engineered to perfection, this top-tier 100 amp MB10F phase diode bridge rectifier effortlessly manages high power applications, boasting an impressive maximum forward ...
708. 700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f [Dec 31, 2025]
PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
709. Dh065n06, to-220, 65A 60V N-Channel Enhancement Mode Power Mosfet [Dec 31, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
710. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06D to-252 [Dec 31, 2025]
PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
711. 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90 to-3pn [Dec 31, 2025]
PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
712. 40A 600V Fast Recovery Diode Mur40fu60DCT to-3pn [Dec 31, 2025]
PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V DC Blocking Voltage VR 600 V Average Rectified Forward ...
713. 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn [Dec 31, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
714. 45A 300V Fast Recovery Diode Mur4530dcs to-3p [Dec 31, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
715. Meter-Bus Transceiver [Jan 10, 2023]
MS721 is a single chip transceiver developed for Meter-Bus standard (EN1434-3) applications.The MS721 interface circuit adjusts the different potentials between a slave system and the Meter- Bus master. The connection ...
Company: CHANGZHOU XITA PLASTIC CO., LTD.
716. Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off [Dec 31, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
717. 90A 200V N-Channel Enhancement Mode Power Mosfet Dh100n20d to-3pn [Dec 31, 2025]
PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
718. 150A 150V N-Channel Enhancement Mode Power Mosfet DSG059n15na [Dec 31, 2025]
PARAMETER SYMBOL VALUE UNIT DSG059N15NA Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
719. 61A 60V N-Channel Enhancement Mode Power Mosfet Dh16n06 to-220 [Dec 31, 2025]
PARAMETER SYMBOL VALUE UNIT DH16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N06 DHF16N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
720. 40A 200V Schottky Barrier Diode Mbr40200CT to-263 & Mbr40200nct to-3pn [Dec 31, 2025]
Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
