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Product List

Schottky Barrier Diode (MBRF20150CT)

13126. Schottky Barrier Diode (MBRF20150CT) Open Details in New Window [Aug 21, 2024]

Nanjing inmark microelectronic technology company is an enterprise specializing in the production of semiconductor devices, the company in the United States, Germany, Taiwan and China with a semiconductor chip R & D ...

Company: Nanjing Inmark Microelectronic Company

S Type Alloy Steel Load Cell 50kg to 5t for Crane/Belt/Blending Scale Pressure Sensor

13127. S Type Alloy Steel Load Cell 50kg to 5t for Crane/Belt/Blending Scale Pressure Sensor Open Details in New Window [Jul 04, 2023]

1. Load cells are available in the capacities 50kg to 7.5T. 2. Alloy steel,sealed by adhesive inside,oil-proof,waterproof and anti-corrosion,suitable for all kinds of environments. 3. S beam design,tension and/or ...

Company: Taiheng Elecctronic Technology (Zhangjiagang) Co.,Ltd

S Loadcell Compression and Tension Crane Scale Force Sensor 500kg -5000kg

13128. S Loadcell Compression and Tension Crane Scale Force Sensor 500kg -5000kg Open Details in New Window [Oct 28, 2022]

S LOAD CELL Our products are high precision load cell, little non-linearity and Hysteretic, little creep, have little temp. Effect on zero. Have high defend grade, they ensure products Longley stability.

Company: Wuxi Grasse Electric Co., Ltd.

Pressure Sensor Wafer/Die

13129. Pressure Sensor Wafer/Die Open Details in New Window [Oct 13, 2016]

Description MEMSensing unique patented technology SENSA craft, made of silicon sensitive device with a Wheatstone bridge structure and precision mechanics. The series pressure sensor products are used by other ...

Company: Memsensing Microsystems (Suzhou, China) Co., Ltd.

N and P-Channel Enhancement Mode Mosfet Jmtg100c03D

13130. N and P-Channel Enhancement Mode Mosfet Jmtg100c03D Open Details in New Window [Jul 22, 2022]

Product Description Features N-Channel: 30V, 12A RDS(ON) < 13m&Omega; @ VGS = 10V RDS(ON) < 17m&Omega; @ VGS = 4.5V P-Channel: -30V, -10A RDS(ON) < 25m&Omega; @ VGS = -10V RDS(ON) < 40m&Omega; @ VGS = -4.5V ...

Company: Suzhou Tonghuiyang Electronics Co.; Ltd

Hirschmann Pressure Sensor

13131. Hirschmann Pressure Sensor Open Details in New Window [Apr 10, 2020]

Equipped with new pressure heads that allow finer adjustment of the pressure range Customized according to standard and special requirements: Standard interfaces, pressure ranges, or special flange types High accuracy: ...

Company: Xuzhou Hirschmann Electronics Co., Ltd

RCD Diode

13132. RCD Diode Open Details in New Window [Aug 21, 2024]

Auxiliary Switch Diode for RCD Auxiliary switch diode for RCD is a kind of diode which in the use of snubber circuit, widely used in the primary side of the flyback switch power supply clamping snubber circuit. When ...

Company: Changzhou Galaxy Century Microelectronics Co., Ltd.

Negative Temperature Ntc Thermistor Nsp Thermistor

13133. Negative Temperature Ntc Thermistor Nsp Thermistor Open Details in New Window [Apr 07, 2024]

Product Description It has small volume and big powder strongy control the wave of current,fast reaction,long life ,high reliablity .It is used in switch and control power, UPS power, protect all types of eletron ...

Company: Nanjing Guangliu Trading Co., Ltd.

Gas Detection Alarm System Gas Safety Detector for Nh3 Co H2s Gas Leakage Monitoring 4-20mA

13134. Gas Detection Alarm System Gas Safety Detector for Nh3 Co H2s Gas Leakage Monitoring 4-20mA Open Details in New Window [May 20, 2024]

We are Gas Detector Manufacturer with SIL CNEX ATEX certification. The gas detector can detect the presence of gases in an environment, usually as part of a safety system. These detectors can be used to monitor various ...

Company: Suzhou Ansion Technology Co., Ltd

Super High Pressure Xe-Hg Lamp for Nikon I11 Lithography Machine

13135. Super High Pressure Xe-Hg Lamp for Nikon I11 Lithography Machine Open Details in New Window [Mar 20, 2025]

Professional-Grade Xe-Hg Lamp for Precision Lithography Systems Nikon I11 Compatible | 4500psi Ultra-High Pressure | Semiconductor Certified Core Advantages Military-Grade Electrodes Equipped with ThO2/Ce-W alloy ...

Company: Lianyungang Kangze Technology Co., Ltd

Electronic Semiconductor

13136. Electronic Semiconductor Open Details in New Window [Aug 22, 2024]

ELECTRONIC SEMICONDUCTOR THERMOELECTRIC POWER GENERATOR MODULES,CAPACITY: 200A-5000A/100V-6500V, IT(AV) RANGE: 200A-5000A VDRM/VDRM RANGE: 100V-6500V

Company: Nanjing New May Toy Co., Ltd.

Sapphire Wafer R Plane, M Plane, Semi Polar, Non Polar, off Cut

13137. Sapphire Wafer R Plane, M Plane, Semi Polar, Non Polar, off Cut Open Details in New Window [Aug 21, 2024]

Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. R-plane sapphire ...

Company: Helios New Materials Co., Ltd.

Programmable Storage 24c512

13138. Programmable Storage 24c512 Open Details in New Window [Aug 20, 2024]

Shanghai Belling Corp., Ltd BL24C512 Features Page Size: 128 bytes ...

Company: T. Y. Z Co., Ltd

Super Junction Mosfet, 190mohm 650V, Jcb190n650s, To263, Alternative of Fcb190n65s3

13139. Super Junction Mosfet, 190mohm 650V, Jcb190n650s, To263, Alternative of Fcb190n65s3 Open Details in New Window [Mar 03, 2024]

super Junction MOSFET Product Package VDS IDmax Rds(on) VGS,max Qg(tot) competitor [V] [A] [m&Omega;] [V] [nC] JCP190N650S TO-220 ...

Company: Suzhou Jitrec Electronic and Technology Co., Ltd

Super Junction Mosfet, 190mohm, 650V, Jcx190n650s, To220f Alternative of Fcpf190n65s3

13140. Super Junction Mosfet, 190mohm, 650V, Jcx190n650s, To220f Alternative of Fcpf190n65s3 Open Details in New Window [Mar 03, 2024]

super Junction MOSFET Product Package VDS IDmax Rds(on) VGS,max Qg(tot) competitor [V] [A] [m&Omega;] [V] [nC] JCP190N650S TO-220 ...

Company: Suzhou Jitrec Electronic and Technology Co., Ltd