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Product List
946. 80A 300V Fast Recovery Diode Mur80fu30CT to-247 
[Jun 25, 2025]
Features Low power loss high efficiency Low forward voltage high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
947. 110A 30V N-Channel Enhancement Mode Power Mosfet 110n03 to-220 [Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS 30 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
948. 600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252 [Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
949. 70A 100V N-Channel Enhancement Mode Power Mosfet ED70n10 to-263 [Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
950. 20A 60V Schottky Barrier Diode Mbr2060CT to-220 [Jun 25, 2025]
Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
951. 30A 400V Fast Recovery Diode Mur3040CT to-263 [Jun 25, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
952. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10I to-262 [Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
953. Three-Terminal Negative Voltage Regulator IC L7915CV to-220 [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=-5V~-15V VI -35 V Output Current IO Internally Limited V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
954. 12A 100V N-Channel Enhancement Mode Power Mosfet DHD12n10 to-252 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHB12N10/DHD12N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8.5 A Drain ...
955. 50A 1200V Trenchstop Insulated Gate Bipolar Transistor G50n120d to-264 IGBT [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
956. Three-Terminal Voltage Regulator IC L7808CV to-220 [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
957. 9A 200V N-Channel Enhancement Mode Power Mosfet D630 to-252 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
958. 68A 1200V N-Channel Sic Power Mosfet Dccf040m120A2 [Jun 23, 2025]
68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
959. 8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT 840/I840/E840/B840/D840 F840 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
960. 10A 150V Schottky Barrier Diode Mbr10150CT to-252b [Jun 23, 2025]
Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
