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Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
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1036. Insulated Gate Bipolar Transistor IGBT G60t65D to-3p Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode Mur1040CT to-220
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1037. 10A 400V Fast Recovery Diode Mur1040CT to-220 Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06 to-220
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1038. 85A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06 to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 600V N-Channel Enhancement Mode Power Mosfet 7n60 to-220
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1039. 7A 600V N-Channel Enhancement Mode Power Mosfet 7n60 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 300V Fast Recovery Diode Mur80fu30bct to-247
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1040. 80A 300V Fast Recovery Diode Mur80fu30bct to-247 Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 200V N-Channel Enhancement Mode Power Mosfet Dhf50n20 to-220f
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1041. 50A 200V N-Channel Enhancement Mode Power Mosfet Dhf50n20 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHF50N20 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dhs020n85 to-220 180A 85V N-Channel Enhancement Mode Power Mosfet
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1042. Dhs020n85 to-220 180A 85V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS020N85/DHS020N85E DHS020N85D/DHS020N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

0.8A 600V N-Channel Enhancement Mode Power Mosfet D1n60 to-252
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1043. 0.8A 600V N-Channel Enhancement Mode Power Mosfet D1n60 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 600V N-Channel Enhancement Mode Power Mosfet F7n60 to-220f
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1044. 7A 600V N-Channel Enhancement Mode Power Mosfet F7n60 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

155A 40V N-Channel Enhancement Mode Power Mosfet DHD035n04 to-252
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1045. 155A 40V N-Channel Enhancement Mode Power Mosfet DHD035n04 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH035N04/DHI035N04/DHE035N04/DHB035N04/DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 600V N-Channel Enhancement Mode Power Mosfet D4n60 to-252
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1046. 4A 600V N-Channel Enhancement Mode Power Mosfet D4n60 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

600V 12A N-Channel Enhancement Mode Power Mosfet 12n60 to-220
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1047. 600V 12A N-Channel Enhancement Mode Power Mosfet 12n60 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 700V N-Channel Enhancement Mode Power Mosfet Dhf8n70 to-220
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1048. 8A 700V N-Channel Enhancement Mode Power Mosfet Dhf8n70 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 8N70/I8N70/E8N70 DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85e to-263
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1049. 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 90V N-Channel Enhancement Mode Power Mosfet Dh140n09 to-220
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1050. 140A 90V N-Channel Enhancement Mode Power Mosfet Dh140n09 to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 97 V ID (T=25ºC) - - 140 A BVGSS ±20 V VTH 2 4 V EAS - - 1080 mJ Ptot - - 250 W Rdson 6.5 - 7.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd