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Product List
1606. -85A -60V P-Channel Enhancement Mode Power Mosfet Dtd125p06la to-252 
[Jun 23, 2025]
Features High density cell design for ultra low Rdson 175°C operating temperature Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for ...
1607. 70A 650V N-Channel Super Junction Power Mosfet Djc070n65m2 to-247 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
1608. 15A 1200V Sic Schottky Barrier Diode Dcgt15D120g4 to-220-2L [Jun 23, 2025]
8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1609. 33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 33 A (T=100ºC) 22 A Drain ...
1610. 140A 150V N-Channel Enhancement Mode Power Mosfet DSG070n15na to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...
1611. 120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
1612. 150V 150A N-Channel Enhancement Mode Power Mosfet DSG059n15na to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
1613. 10.6A 700V N-Channel Super Junction Power Mosfet Djd420n70t to-252 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...
1614. 130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1615. Hot Selling IGBT Original Stock Rectification Water Cooling Bridge Rectifier Thyristor SCR Power ... [May 22, 2025]
Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
1616. 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6 [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 355 A (T=100ºC) 251 A Drain ...
1617. 100V/1.8mΩ /272A N-Mosfet Dsu024n10n3a Toll Package [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 272 A (T=100ºC) 192 A Drain ...
1618. 100V/1.15mΩ /373A N-Mosfet Dsu014n10n3a Toll Package [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 458 A (T=100ºC) 324 A Drain ...
1619. 80V/3.4mΩ /100A N-Mosfet DSP037n08n3 Dfn5X6 [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 84 A Drain ...
1620. Disc Type Kk Chinese Fast Turn on Phased Rectification Parallel Connection High Voltage Thyristor ... [Jul 24, 2025]
Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
