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Product List

Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b
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1666. Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263
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1667. 120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHF10H 037R DH10H037R/ DHE10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode Murf1060 to-220f-2L
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1668. 10A 600V Fast Recovery Diode Murf1060 to-220f-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Fast Recovery Diode Mur40120 to-220-2L
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1669. 40A 1200V Fast Recovery Diode Mur40120 to-220-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 98V N-Channel Enhancement Mode Power Mosfet Dhs046n10d to-252b
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1670. Hot Sale 120A 98V N-Channel Enhancement Mode Power Mosfet Dhs046n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS04 6N10/DHS04 6N10E /DHS046N10B/DHS046N10D DHS04 6N10F Drian-to-Source Voltage VDSS 98 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10
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1671. Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT FD70N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 73 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b
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1672. Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P35/ DH100P35I/ DH100P 35E/ DH100P35B/ DH100P35D DH100P 35F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Sic Schottky Barrier Diode Dcct40d120g4 to-247-2
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1673. 40A 1200V Sic Schottky Barrier Diode Dcct40d120g4 to-247-2 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 650V Sic Schottky Barrier Diode Dcet20d65g3 to-263-2
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1674. 25A 650V Sic Schottky Barrier Diode Dcet20d65g3 to-263-2 Open Details in New Window [Jun 23, 2025]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b
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1675. Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263
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1676. 180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263
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1677. 120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a
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1678. 85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

135V/3.3mΩ /225A N-Mosfet Dsu035n14n3
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1679. 135V/3.3mΩ /225A N-Mosfet Dsu035n14n3 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1700V/80mΩ /37A N-Channel Sic Mosfet Dcc080m170g2 to-247-3
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1680. 1700V/80mΩ /37A N-Channel Sic Mosfet Dcc080m170g2 to-247-3 Open Details in New Window [Nov 08, 2025]

68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd