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Product List
1741. Dh045n06p Dfn5X6 
[Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH045N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 115 A (T=100ºC) 80 A Drain ...
1742. 20A 100V Best Sale Schottky Barrier Diode Mbr20100CT to-252 [Jun 23, 2025]
Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications converters free-wheeling diodes free-wheeling ...
1743. 500V/3A Half-Bridge Ipm with Internal Integrated Temperature Detection Output Dpqb03hb50mf Esop-9 [Aug 09, 2025]
Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 3A Power Dissipation (TC = 25℃,Each MOSFET) 24.5W Operating Junction Temperature -40~150℃ Packing & Delivery Transparency here ...
1744. 650V IGBT Module Dgq450c65m2t [Jun 23, 2025]
Hot sale IGBT MODULE FOR SOLAR INVERTER APPLICATIONS, WITH VARIOUS MODELS.
1745. 180A 100V N-Channel Enhancement Mode Power Mosfet DSG040n10n3a to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
1746. 100A 1700V Half Bridge Module Dga100h170m2t 34mm [Jun 23, 2025]
1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1747. Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor G50t65ds to-247s [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
1748. Hot Sale 105A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04p Dfn5*6-8 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH025N04P Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73 A Drain ...
1749. Hot Sale 81A 30V N-Channel Enhancement Mode Power Mosfet Dhp90n03b17 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...
1750. CE UL High Precision Rsct 1000A 100mv Flexible Current Transformer Rope Sensor Fct Rogowski Coil [Dec 01, 2025]
Split Core Flexible Rogowski Coil with high frequency Split Rogowski Coil current sensors are designed for fast and easy installation on existing primary conductors/ BUS bars. The split design permits non-contact AC ...
1751. Spoke Weighing Sensor 100~250t Shear Web Load Cell [Nov 22, 2025]
Spoke Weighing Sensor 100~250t shear web load cell Product Description Spoke pressure sensor product features 1. Spoke type pressure sensor adopts imported foil strain gauge and elastic element to form the sensitive ...
1752. 600A 650V Half Bridge Module Dgd600h65m2t [Jul 09, 2025]
1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1753. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1754. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1755. 300A 1200V Half Bridge Module Dgd300h120L2t [Jul 09, 2025]
1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
