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Product List
2191. 50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6 
[Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS -40 V ID (T=25ºC) - -50 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 75 W Features Fast Switching Low ON ...
2192. 40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7 [Jun 23, 2025]
40A 1200V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2193. 112A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85p Dfn5X6 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 78 A Drain ...
2194. 47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
2195. 176A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07p Dfn5X6-8L [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 176 A (T=100ºC) 123 A Drain ...
2196. 300A 40V N-Channel Enhancement Mode Power Mosfet Dhs010n04u [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 300 (Tc=25ºC) 228 A (Tc=100ºC) 5 A Drain ...
2197. Positive Voltage Regulators 78L12 Sot-23 [Jun 23, 2025]
1 Description The 78LXX series of three-terminal positive regulators employ internal current limiting and thermal shutdown, making them essentially indestructible. If adequate heat-sink is provided, they can ...
2198. 64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...
2199. 75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
2200. 300A 40V N-Channel Enhancement Mode Power Mosfet Dsu010n04la Toll Package [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 228 A Single Pulse Avalanche ...
2201. 108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6 [Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...
2202. 160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 240 A Collector Current (Tc=100ºC) 160 A Pulsed ...
2203. 117A 70V N-Channel Enhancement Mode Power Mosfet Dhs043n07p [Jun 23, 2025]
Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Synchronous rectification in SMPS Hard ...
2204. 55A 650V N-Channel Sic Power Mosfet Dcev030m65g2 to-263-7 [Jun 23, 2025]
Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2205. 220A 20V N-Channel Enhancement Mode Power Mosfet Dh009n02p Dfn5X6 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...
