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Product List
2236. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e 
[Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2237. 60A 300V Fast Recovery Diode Mur6030nct to-3pn [Jun 23, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2238. 8A 650V Sic Schottky Barrier Diode Dce08d65g4 to-263 [Jun 23, 2025]
8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2239. 250A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88e to-263 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
2240. 13A 650V N-Channel Super Junction Power Mosfet Dhfsj13n65 to-220f [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2241. 30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
2242. 100A 68V N-Channel Enhancement Mode Power Mosfet Dhe3205A to-263 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2243. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10e to-263 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHS037N10E DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2244. 150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15 [Jun 23, 2025]
8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2245. 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
2246. 110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85e to-263 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHS055N85/ DHS055N85E DHS055N85D/ DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2247. 150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263 [Jun 23, 2025]
8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2248. 4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT B4N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...
2249. 30A 60V Low Vf Schottky Barrier Diode Mbr30r60cts to-220c [Jun 23, 2025]
Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
2250. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07e to-263 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
