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Product List
2311. 120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c 
[Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
2312. 150V 150A N-Channel Enhancement Mode Power Mosfet DSG059n15na to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
2313. 10.6A 700V N-Channel Super Junction Power Mosfet Djd420n70t to-252 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...
2314. 130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2315. Hot Selling IGBT Original Stock Rectification Water Cooling Bridge Rectifier Thyristor SCR Power ... [May 22, 2025]
Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
2316. 4/6/8/12 Inch Silicon Wafer for Mosfet Chips [Jan 03, 2026]
Basic Info Product Description Silicon Wafer Silicon Si uses: used as a semiconductor material high power transistor rectifier ...
Company: Wuxi Kingful Corporation., Ltd
2317. 100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
2318. 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
2319. 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263 [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
2320. 20mΩ 650V N-Channel Sic Power Mosfet Dccf020m65g2 to-247-4L [Nov 08, 2025]
20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2321. 100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 [Nov 08, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
2322. 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263 [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
2323. 85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
2324. 120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263 [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
2325. High Quality SCR Thyristors Semi-Conductor Rectifiers Chips for Semiconductor Devices with Overload ... [Jul 24, 2025]
Product Description High-Quality Semiconductor Chips: Experience the cutting-edge innovation of Zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semiconductor Chips. Engineered for extraordinary ...
