Latest Info
- Jan 292026 New Industrial Cyclo Drive Heavy Duty Cyclo Drive for Smooth & Efficient Gearmotor Operations
- Jan 29High Quality 1.56 Single Vision Lens Prescrption Lenses Optical for Eyeglasses
- Jan 29Innovative Electrostatic Coating with Advanced Powder Coating Technology
- Jan 29New Design OEM Private Label Orthodontic Soft Bristle PETG Adult Toothbrush Home Use Teeth Cleaning ...
- Jan 29High Quality Monoblock Car Wheels Rim Alloy Forged Deep Concave Wheels 18 19 20 21 22 23 24 Inch ...
- Jan 29Factory Wholesale Price High Quality Precision Hex Socket Set Screw Headless Fasteners
- Jan 292026 Advanced 1.3ton Double Drum Vibratory Road Roller for Construction Project
- Jan 29Ever Power Underslung Undermount Reefer Container Generator Genset for Carrier Thermo King ...
- Jan 29Customizable High-Strength Connection Stainless Steel 12-Point Head Flange Bolt
- Jan 29Fitted Grounding Bed Sheet
Product List
1486. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c 
[Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1487. High-Energy Ion Implanters Used in Integrated Circuits [Dec 13, 2025]
Product Description Ion implantation technology has the following characteristics: single-sided collimation doping, good doping uniformity and controllability, singularity of doping elements, and it is very easy to ...
1488. High Temperature Furnace for Si and Sic Oxidation [Dec 13, 2025]
Product Description The centrotherm c.OXIDATOR 150 high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. Thanks to the centrotherm ...
1489. 150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 175 (Tc=100ºC) 124 A Drain ...
1490. 100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6 [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...
1491. 30mΩ 650V N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L [Nov 08, 2025]
30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1492. 40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6 [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...
1493. 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...
1494. 200V/11mΩ /110A N-Mosfet Dse108n20na to-263 [Nov 08, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
1495. Oxide and Borated Dumet Lead Wire for Diode [Jun 27, 2025]
Dumet wire used as All kinds of light bulb Ni 41~43%, Fe Balance Dumet is a kind of permanent matching with soft glass sealing double metal alloy materials, has a good thermal expansion coefficient, mechanical ...
1496. N-Channel Enhancement Mode Power Mosfet 7A 650V 7n65 to-220 [Jun 25, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1497. 80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn [Jun 25, 2025]
Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...
1498. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 [Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1499. 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn [Jun 25, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...
1500. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b [Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
