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Product List
1456. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100b to-251 
[Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1457. 110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85D to-252 [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DHS055N85/DHS055N85E DHS055N85D/DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1458. 30A 1200V Fast Recovery Diode Mur30120 to-220f-2L [Jun 23, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1459. 63A 60V N-Channel Enhancement Mode Power Mosfet Dh132n06 to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH132N06 Units DH132N06I/DH132N06E DH132N06B/DH132N06D DH132N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1460. Three-Terminal Voltage Regulator IC L7809CV to-220 [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
1461. D120n04 to-252 120A 40V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 0.8 2 V EAS - - 960 mJ Ptot - - 120 W Rdson 3.3 - 4.5 mΩ ...
1462. Dh066n06b, to-251, 85A 60V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
1463. 60A 100V Schottky Barrier Diode Mbr60100CT to-220 [Jun 23, 2025]
Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
1464. Dhs065n85 to-220 100A 85V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 95 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 400 mJ Ptot - - 125 W Rdson 6.5 - 7.8 mΩ ...
1465. Dh90n040r to-220 150A 90V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 98 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 189 W Rdson 4.0 - 4.9 mΩ ...
1466. Dh012n03, to-220, 320A 30V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...
1467. Dh3205t to-220c 120A 55V Mosfets N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 2100 mJ Ptot - - 320 W Rdson 6.8 - 8.0 mΩ ...
1468. 60A 1200V Fast Recovery Diode Mur60120 to-247-2L [Jun 23, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1469. 30A 200V Schottky Barrier Diode Hmbr30200CT to-220 [Jun 23, 2025]
Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Applications converters free-wheeling diodes reverse battery protection Typical applications are ...
1470. High Quality 100 AMP MB10f Phase Diode Bridge Rectifier [Jun 05, 2025]
Product Description High Power Handling Capacity: This high-quality 100 amp MB10F phase diode bridge rectifier is designed to handle high power applications with ease, featuring a maximum forward current of 200A and a ...
