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Product List
1471. 5A 600V N-Channel Enhancement Mode Power Mosfet F5n60 to-220f 
[Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT F5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
1472. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b [Jun 23, 2025]
SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...
1473. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30ad to-252b [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
1474. 60A 200V Schottkybarrierdiode Mbr60200CT to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...
1475. 10A 500V N-Channel Enhancement Mode Power Mosfet F10n50 to-220f [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) (Tc=25ºC) 10 (Tc=100ºC) 6.3 A Drain ...
1476. 650V 4A Sic Schottky Barrier Diode Dcd04D65g4 to-252 Package [Jun 23, 2025]
25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1477. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 [Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1478. 2A 600V N-Channel Enhancement Mode Power Mosfet D2n60 to-252b [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT D2N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 0A (T=100ºC) 1.3 A Drain ...
1479. 15A 600V Fast Recovery Diode Mur1560A [Jun 23, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1480. 650V 10A Sic Schottky Barrier Diode Dcd10d65g4 to-252 [Jun 23, 2025]
25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1481. 180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
1482. 30A 600V Fast Recovery Diode Murf3060 to-220-2L [Jun 23, 2025]
Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1483. 145A 30V N-Channel Enhancement Mode Power Mosfet Dh028n03D to-252b [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH028N0 3F DH028N03 /DH028N03E DH028N03B/DH028N03D Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1484. 1200V 10A Sic Schottky Barrier Diode Dcd10d120g4 to-252 [Jun 23, 2025]
25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1485. 8A 500V N-Channel Enhancement Mode Power Mosfet 8n50 to-220c [Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT 8N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
